Understanding the impact of the dielectric layer in modulating the TER of FTJ devices

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Contributors

  • Luca Carpentieri - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Suzanne Lancaster Namlab - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Abstract

In this paper, we demonstrate an improvement of the On/Off ratio of FTJ devices by the introduction of a high-k Y2O3 layer. To demonstrate the impact of the tunneling barrier layer on the performance of the FTJ, the Al2O3 dielectric layer is investigated for comparison. We report on the increase of the current density with cycling and observe how the on-current is mainly determined by the ferroelectric layer although the dielectric layer is contributing to a boost of the TER by influencing the off state.

Details

Original languageEnglish
Title of host publicationESSERC 2024 - Proceedings
PublisherIEEE Computer Society
Pages408-411
Number of pages4
ISBN (electronic)979-8-3503-8813-8
Publication statusPublished - 2024
Peer-reviewedYes

Publication series

SeriesEuropean Conference on Solid-State Circuits (ESSCIRC)
ISSN1930-8833

Conference

Title50th IEEE European Solid-State Electronics Research Conference
SubtitleThe Next Circuits for a Better Life
Abbreviated titleESSERC 2024
Conference number50
Duration9 - 12 September 2024
Website
LocationBruges Meeting & Convention Centre (BMCC)
CityBruges
CountryBelgium

External IDs

ORCID /0000-0003-3814-0378/work/180371980

Keywords

Keywords

  • cycling, FTJ, Poole-Frenkel emission, TER, tunneling, Y2O3