Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
We apply time-resolved four-wave mixing as a novel tool to study resonant tunneling of carriers in semiconductor heterostructures. The polarization decay of excitons in a quantum well is much faster when the alignment of the electron levels in adjacent wells leads to resonant tunneling and subsequent scattering of the carriers.
Details
| Original language | English |
|---|---|
| Pages (from-to) | 2031-2033 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 56 |
| Issue number | 20 |
| Publication status | Published - 1990 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 0010206220 |
|---|