An astonishingly simple yet versatile alternative method for the creation of ultra large scale nano dot arrays [1-3] utilising the fact that exposure in electron beam lithography (EBL) is performed by addressing single pixels with defined distances is evaluated here in terms of usability with different resists. If this inter-pixel distance for a generic shape is set to match the desired lattice constant w of the dot array and the deposited area dose is reduced to about 1/100 to 1/10 of the clearing area dose of the respective resist, a rectangular lattice, i.e., array, of dots is achieved. The dot diameters resulting from this method are analysed with respect to the applied area dose and the desired lattice constant for three commonly used EBL resists: PMMA 950k, ZEP 520A and HSQ.