Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Maik Simon - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Halid Mulaosmanovic - , NaMLab - Nanoelectronic materials laboratory gGmbH, Global Foundries, Inc. (Author)
  • Violetta Sessi - , Global Foundries, Inc. (Author)
  • Maximilian Drescher - , Global Foundries, Inc. (Author)
  • Niladri Bhattacharjee - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Maciej Wiatr - , Global Foundries, Inc. (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH, Technische Universität Dresden (Author)
  • Jens Trommer - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Abstract

Reconfigurable field effect transistors are an emerging class of electronic devices, which exploit a structure with multiple independent gates to selectively adjust the charge carrier transport. Here, we propose a new device variant, where not only p-type and n-type operation modes, but also an ambipolar mode can be selected solely by adjusting a single program voltage. It is demonstrated how the unique device reconfigurability of the new variant can be exploited for analog circuit design. The non-linearity of the ambipolar mode can be used for frequency doubling without the generation of additional harmonics. Further, phase shifter and follower circuits are enabled by the n- and p-type modes, respectively. All three functions can be combined to create a 3-to-1 reconfigurable analog signal modulation circuit on a single device enabling wireless communication schemes. Both, the concept as well as the application have been experimentally demonstrated on industrial-scale fully-depleted SOI platform. The special transport physics in those structures has been analyzed by TCAD simulations as well as temperature dependent measurements.

Details

Original languageEnglish
Article number7042
JournalNature communications
Volume13
Issue number1
Publication statusPublished - Dec 2022
Peer-reviewedYes

External IDs

PubMed 36396630