As-deposited polycrystalline ZrO2 thin films are demonstrated to exhibit antiferroelectric hysteresis down to a film thickness of 4.3 nm. Low temperature processed capacitors for antiferroelectric random access memory devices are constructed by exploiting electrodes with different work functions to stabilize non-volatility in ZrO2 films within a thickness range of 4-15 nm. The as-deposited thin film antiferroelectric ZrO2 capacitors show excellent endurance cycling (> 1010 cycles) and have similar properties to 500 °C annealed films. Cycling endurance and remanent polarization are enhanced as the ZrO2 thickness is scaled from 15 to 4 nm. ZrO2 thickness scaling enables lower operating voltages that can reduce non-volatile memory power consumption.