The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Timofey V. Perevalov - , RAS - Institute of Semiconductor Physics, Siberian Branch, Novosibirsk State University (Author)
  • Igor P. Prosvirin - , RAS - Boreskov Institute of Catalysis, Siberian Branch (Author)
  • Evgenii A. Suprun - , RAS - Boreskov Institute of Catalysis, Siberian Branch (Author)
  • Furqan Mehmood - , Chair of Nanoelectronics (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, TUD Dresden University of Technology (Author)
  • Uwe Schroeder - , TUD Dresden University of Technology (Author)
  • Vladimir A. Gritsenko - , RAS - Institute of Semiconductor Physics, Siberian Branch, Novosibirsk State University (Author)

Abstract

HfxZr1-xO2 and lanthanum-doped HfxZr1-xO2:La thin films are candidates for applications in ferroelectric random-access memory. Here, we explore the atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La thin films grown by atomic layer deposition. Using X-ray photoelectron spectroscopy, it was found that the oxides under study have an almost identical electronic structure and a bandgap of about 5.4 eV. The Hf0.5Zr0.5O2:La film was shown to consist of the mixture of Hf0.5Zr0.5O2 and La2O3 phases. The bombardment with argon ions of the studied films leads to oxygen vacancy generation in the near-surface layer. The oxygen vacancy concentrations in the bombarded films were evaluated from the comparison of experimental valence band photoelectron spectra with the theoretical ones calculated using the density functional theory.

Details

Original languageEnglish
Pages (from-to)595-600
Number of pages6
JournalJournal of Science: Advanced Materials and Devices
Volume6
Issue number4
Publication statusPublished - Dec 2021
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/142256171

Keywords