Stacking Polymorphism in PtSe2 Drastically Affects Its Electromechanical Properties

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Roman Kempt - , Chair of Theoretical Chemistry (Author)
  • Sebastian Lukas - , RWTH Aachen University (Author)
  • Oliver Hartwig - , Bundeswehr University of Munich (Author)
  • Maximilian Prechtl - , Bundeswehr University of Munich (Author)
  • Agnieszka Kuc - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Thomas Brumme - , Chair of Theoretical Chemistry (Author)
  • Sha Li - , AMO GmbH (Author)
  • Daniel Neumaier - , AMO GmbH, University of Wuppertal (Author)
  • Max C. Lemme - , RWTH Aachen University (Author)
  • Georg S. Duesberg - , Bundeswehr University of Munich (Author)
  • Thomas Heine - , Chair of Theoretical Chemistry, Helmholtz-Zentrum Dresden-Rossendorf, Yonsei University (Author)

Abstract

PtSe2 is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. It is shown that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device are estimated.

Details

Original languageEnglish
Article number2201272
JournalAdvanced science
Volume9
Issue number22
Publication statusPublished - 5 Aug 2022
Peer-reviewedYes

External IDs

PubMed 35652199
Mendeley ed18d9d6-7f30-3662-ae52-87bc605ee98d

Keywords

Keywords

  • density-functional theory, piezoresistive sensors, PtSe, Raman characterization, stacking disorder, two-dimensional materials, PtSe2