Stacking Polymorphism in PtSe2 Drastically Affects Its Electromechanical Properties
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
PtSe2 is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. It is shown that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device are estimated.
Details
Originalsprache | Englisch |
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Aufsatznummer | 2201272 |
Fachzeitschrift | Advanced science |
Jahrgang | 9 |
Ausgabenummer | 22 |
Publikationsstatus | Veröffentlicht - 5 Aug. 2022 |
Peer-Review-Status | Ja |
Externe IDs
PubMed | 35652199 |
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Mendeley | ed18d9d6-7f30-3662-ae52-87bc605ee98d |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- density-functional theory, piezoresistive sensors, PtSe, Raman characterization, stacking disorder, two-dimensional materials, PtSe2