Stack capacitor integration with buried oxygen barrier using chemical mechanical polishing of noble metals
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
A novel integration scheme for the formation of stack capacitor electrodes and diffusion barriers is presented. The concept makes use of chemical mechanical polishing of noble metals and allows the integration of a dielectric barrier. Electrical data is presented showing excellent parametric yield of contact resistance comparable to standard integration using RIE. Based on the data presented, a variety of new integration schemes for new materials can be deducted.
Details
Original language | English |
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Title of host publication | 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 264-266 |
Number of pages | 3 |
ISBN (print) | 0-7803-6412-0 |
Publication status | Published - 2001 |
Peer-reviewed | Yes |
Externally published | Yes |
Publication series
Series | International Symposium on VLSI Technology, Systems, and Applications |
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ISSN | 1524-766X |
External IDs
ORCID | /0000-0003-3814-0378/work/156338388 |
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