Silicon doping of HVPE GaN bulk-crystals avoiding tensile strain generation
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Doped GaN:Si crystals were grown in a commercially available vertical HVPE reactor. The templates used for the HVPE heteroepitaxy were so-called FACELO seeds, with a starting GaN layer thickness of 3-4 μm. The FWHM of the 0002 and the reflection of the HVPE-grown GaN:Si crystals with a thickness of 3 mm are and , respectively, indicating excellent crystal quality. Hall measurements resulted in a charge carrier concentration of cm-3, while exhibiting a mobility of 250 cm-2V-1 s-1. These values coincide with the values extracted from FTIR measurements and the lineshape fitting of the A1(LO)/plasmon coupled phonon mode of the confocal Raman measurements. SIMS investigations yielded a silicon atom concentration of cm-3. This indicates an activation of the dopant atoms of approximately 90%. The TDD determined by CL dark spot counting was cm-2. Within the measurement accuracy, the confocal Raman measurements did not show a tensile strain generation due to the silicon doping with resulting charge carrier concentrations of cm-3.
Details
Original language | English |
---|---|
Article number | 075502 |
Journal | Journal of Physics D: Applied Physics |
Volume | 49 |
Issue number | 7 |
Publication status | Published - 28 Jan 2016 |
Peer-reviewed | Yes |
External IDs
ORCID | /0000-0003-3814-0378/work/142256275 |
---|
Keywords
ASJC Scopus subject areas
Keywords
- confocal raman, FACELO, GaN:Si, tensile strain