Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2

Research output: Contribution to journalResearch articleContributedpeer-review


  • Ingmar Ratschinski - , Freiberg University of Mining and Technology (Author)
  • Soundarya Nagarajan - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Jens Trommer - , Faculty of Electrical and Computer Engineering, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Andrei Luferau - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Muhammad Bilal Khan - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Artur Erbe - , Chair of Nanoelectronics, Center for Advancing Electronics Dresden (cfaed), Chair of Materials Science and Nanotechnology, Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Yordan M. Georgiev - , Helmholtz-Zentrum Dresden-Rossendorf, Bulgarian Academy of Sciences (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Sean C. Smith - , Australian National University (Author)
  • Dirk König - , Australian National University (Author)
  • Daniel Hiller - , Freiberg University of Mining and Technology, Australian National University (Author)


Silicon nanowires (Si NWs) like structures in the form of nanosheets are the building blocks for future transistors in the most advanced complementary metal–oxide–semiconductor technologies. However, Si NWs with few nanometers in diameter suffer from severe difficulties with respect to efficient impurity doping. These difficulties can be overcome by a novel doping concept for Si NWs comparable to the modulation doping approach known from III–V semiconductors. Modulation doping means that the parent dopant atoms are spatially separated from the volume that is to be doped by embedding them into an adjacent material with a higher bandgap. Herein, Al-doped SiO2 shells around the Si NWs are used for the experimental realization of modulation doping. In two independent experiments, a significant reduction of the electrical resistance of Si NWs by several orders of magnitude is measured, when compared to the resistance of Si NWs with undoped SiO2 shells. The results are discussed in the context of modulation doping by the surface functionalization with SiO2:Al shells.


Original languageEnglish
Article number2300068
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number13
Publication statusPublished - 28 Apr 2023

External IDs

WOS 000978078000001
ORCID /0000-0003-3814-0378/work/142256350



  • electrical properties, modulation doping, resistance, silicon nanowires, Resistance, Electrical properties, Modulation doping, Silicon nanowires

Library keywords