Short-wavelength photoluminescence of SiO2 layers implanted with high doses of Si+, Ge+, and Ar+ ions
Research output: Contribution to journal › Research article › Contributed
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 392-396 |
| Number of pages | 5 |
| Journal | Semiconductors |
| Issue number | 4 |
| Publication status | Published - 1998 |
| Peer-reviewed | No |
External IDs
| Scopus | 0041193059 |
|---|