Semiconductor wafer splitting method

Research output: Intellectual property › Patent application/Patent

Contributors

  • Christian Beyer - (Inventor)
  • Francisco Javier Santos Rodriguez - (Inventor)
  • Hans-Joachim Schulze - (Inventor)
  • Marko Swoboda - , CTF Solar GmbH (Inventor)
  • Infineon Technologies AG

Abstract

A method of splitting a semiconductor wafer includes: forming a slot in an edge of the semiconductor wafer; applying a first stressor to the semiconductor wafer; and applying a second stressor different than the first stressor to the semiconductor wafer, such that the semiconductor wafer splits into two separate pieces. A front side of the semiconductor wafer includes at least one of: a plurality of device structures of a semiconductor device; a metallization layer; and a passivation layer.

Details

A method of splitting a semiconductor wafer includes: forming a slot in an edge of the semiconductor wafer; applying a first stressor to the semiconductor wafer; and applying a second stressor different than the first stressor to the semiconductor wafer, such that the semiconductor wafer splits into two separate pieces. A front side of the semiconductor wafer includes at least one of: a plurality of device structures of a semiconductor device; a metallization layer; and a passivation layer.

Original languageEnglish
IPC (International Patent Classification)H10D 84/ 03 A I
Patent numberUS2025280591
Filing date16 May 2025
Country/TerritoryUnited States of America
Priority date16 May 2025
Priority numberUS202519210065
Publication statusPublished - 4 Sept 2025
Externally publishedYes
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External IDs

ORCID /0000-0003-2572-1149/work/208796494