Semiconductor wafer splitting method
Research output: Intellectual property › Patent application/Patent
Contributors
- Infineon Technologies AG
Abstract
A method of splitting a semiconductor wafer includes: forming a slot in an edge of the semiconductor wafer; applying a first stressor to the semiconductor wafer; and applying a second stressor different than the first stressor to the semiconductor wafer, such that the semiconductor wafer splits into two separate pieces. A front side of the semiconductor wafer includes at least one of: a plurality of device structures of a semiconductor device; a metallization layer; and a passivation layer.
Details
A method of splitting a semiconductor wafer includes: forming a slot in an edge of the semiconductor wafer; applying a first stressor to the semiconductor wafer; and applying a second stressor different than the first stressor to the semiconductor wafer, such that the semiconductor wafer splits into two separate pieces. A front side of the semiconductor wafer includes at least one of: a plurality of device structures of a semiconductor device; a metallization layer; and a passivation layer.
| Original language | English |
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| IPC (International Patent Classification) | H10D 84/ 03 A I |
| Patent number | US2025280591 |
| Filing date | 16 May 2025 |
| Country/Territory | United States of America |
| Priority date | 16 May 2025 |
| Priority number | US202519210065 |
| Publication status | Published - 4 Sept 2025 |
| Externally published | Yes |
External IDs
| ORCID | /0000-0003-2572-1149/work/208796494 |
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