SEMICONDUCTOR WAFER SPLITTING METHOD
Publikation: Geistiges Eigentum › Patentanmeldung/Patent
Beitragende
- Infineon Technologies AG
Abstract
A method of splitting a semiconductor wafer includes: forming a slot in an edge of the semiconductor wafer; applying a first stressor to the semiconductor wafer; and applying a second stressor different than the first stressor to the semiconductor wafer, such that the semiconductor wafer splits into two separate pieces. A front side of the semiconductor wafer includes at least one of: a plurality of device structures of a semiconductor device; a metallization layer; and a passivation layer.
Details
A method of splitting a semiconductor wafer includes: forming a slot in an edge of the semiconductor wafer; applying a first stressor to the semiconductor wafer; and applying a second stressor different than the first stressor to the semiconductor wafer, such that the semiconductor wafer splits into two separate pieces. A front side of the semiconductor wafer includes at least one of: a plurality of device structures of a semiconductor device; a metallization layer; and a passivation layer.
| Originalsprache | Englisch |
|---|---|
| IPC (Internationale Patentklassifikation) | H10D 84/ 03 A I |
| Veröffentlichungsnummer | US2025280591 |
| Land/Gebiet | Deutschland |
| Prioritätsdatum | 16 Mai 2025 |
| Prioritätsnummer | US202519210065 |
| Publikationsstatus | Veröffentlicht - 4 Sept. 2025 |