SEMICONDUCTOR WAFER SPLITTING METHOD

Publikation: Geistiges EigentumPatentanmeldung/Patent

Beitragende

  • Infineon Technologies AG

Abstract

A method of splitting a semiconductor wafer includes: forming a slot in an edge of the semiconductor wafer; applying a first stressor to the semiconductor wafer; and applying a second stressor different than the first stressor to the semiconductor wafer, such that the semiconductor wafer splits into two separate pieces. A front side of the semiconductor wafer includes at least one of: a plurality of device structures of a semiconductor device; a metallization layer; and a passivation layer.

Details

A method of splitting a semiconductor wafer includes: forming a slot in an edge of the semiconductor wafer; applying a first stressor to the semiconductor wafer; and applying a second stressor different than the first stressor to the semiconductor wafer, such that the semiconductor wafer splits into two separate pieces. A front side of the semiconductor wafer includes at least one of: a plurality of device structures of a semiconductor device; a metallization layer; and a passivation layer.

OriginalspracheEnglisch
IPC (Internationale Patentklassifikation)H10D 84/ 03 A I
VeröffentlichungsnummerUS2025280591
Land/GebietDeutschland
Prioritätsdatum16 Mai 2025
PrioritätsnummerUS202519210065
PublikationsstatusVeröffentlicht - 4 Sept. 2025
No renderer: customAssociatesEventsRenderPortal,dk.atira.pure.api.shared.model.researchoutput.Patent