This contribution discusses scaling aspects of individually gated nanowire Schottky junctions which are essential parts of reconfigurable field effect transistors (RFETs). The applicability of the screening (or natural) length theory in relation to the carrier transport is discussed first. Various geometrical parameters of the device were investigated to find the optimal structure in terms of performance. For this purpose, electrostatic properties and the dynamic behavior of the RFET were studied. Finally the increase in performance due to an additional substitution of the silicon by germanium is analyzed.