Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • José P.B. Silva - , University of Minho (Author)
  • Ruben Alcala - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Uygar E. Avci - , Intel (Author)
  • Nick Barrett - , Université Paris-Saclay (Author)
  • Laura Bégon-Lours - , IBM Research Zurich (Author)
  • Mattias Borg - , Lund University (Author)
  • Seungyong Byun - , Seoul National University (Author)
  • Sou Chi Chang - , Intel (Author)
  • Sang Wook Cheong - , Rutgers - The State University of New Jersey, New Brunswick (Author)
  • Duk Hyun Choe - , Samsung (Author)
  • Jean Coignus - , Université Grenoble Alpes (Author)
  • Veeresh Deshpande - , Helmholtz Centre Berlin for Materials and Energy (Author)
  • Athanasios Dimoulas - , Demokritos National Centre for Scientific Research (Author)
  • Catherine Dubourdieu - , Helmholtz Centre Berlin for Materials and Energy, Free University of Berlin (Author)
  • Ignasi Fina - , Institute of Materials Science of Barcelona (ICMAB-CSIC) (Author)
  • Hiroshi Funakubo - , Tokyo Institute of Technology (Author)
  • Laurent Grenouillet - , Université Grenoble Alpes (Author)
  • Alexei Gruverman - , University of Nebraska-Lincoln (Author)
  • Jinseong Heo - , Samsung (Author)
  • Michael Hoffmann - , University of California at Berkeley (Author)
  • H. Alex Hsain - , North Carolina State University (Author)
  • Fei Ting Huang - , Rutgers - The State University of New Jersey, New Brunswick (Author)
  • Cheol Seong Hwang - , Seoul National University (Author)
  • Jorge Íñiguez - , University of Luxembourg, Luxembourg Institute of Science and Technology (Author)
  • Jacob L. Jones - , North Carolina State University (Author)
  • Ilya V. Karpov - , Intel (Author)
  • Alfred Kersch - , Munich University of Applied Sciences (Author)
  • Taegyu Kwon - , Seoul National University (Author)
  • Suzanne Lancaster - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Maximilian Lederer - , Fraunhofer Institute for Photonic Microsystems (Author)
  • Younghwan Lee - , North Carolina State University, Seoul National University (Author)
  • Patrick D. Lomenzo - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Lane W. Martin - , University of California at Berkeley, Lawrence Berkeley National Laboratory (Author)
  • Simon Martin - , Université Grenoble Alpes (Author)
  • Shinji Migita - (Author)
  • Thomas Mikolajick - , NaMLab - Nanoelectronic materials laboratory gGmbH, University of Minho (Author)
  • Beatriz Noheda - (Author)
  • Min Hyuk Park - , Seoul National University (Author)
  • Karin M. Rabe - (Author)
  • Sayeef Salahuddin - , Lawrence Berkeley National Laboratory (Author)
  • Florencio Sánchez - , Institute of Materials Science of Barcelona (ICMAB-CSIC) (Author)
  • Konrad Seidel - , Fraunhofer Institute for Electronic Nano Systems (Author)
  • Takao Shimizu - (Author)
  • Takahisa Shiraishi - (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Akira Toriumi - (Author)
  • Hiroshi Uchida - (Author)
  • Bertrand Vilquin - (Author)
  • Xianghan Xu - (Author)
  • Kun Hee Ye - , Seoul National University (Author)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Abstract

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

Details

Original languageEnglish
Article number089201
JournalAPL materials
Volume11
Issue number8
Publication statusPublished - 1 Aug 2023
Peer-reviewedYes
Externally publishedYes

External IDs

ORCID /0000-0003-3814-0378/work/144255459