Bias temperature instability is a common relia-bility issue in Metal Oxide Semiconductor Field Effect Transistors used in silicon integrated circuits. When transferred to in-dustrial processing platforms, also emerging electron devices need to be characterized under gate bias stress, in order to reveal their behavior in realistic application scenarios. In this work, we present an early evaluation of bias temperature insta-bility on three-gated Reconfigurable Field Effect Transistors. These emerging nanoelectronics devices allow to set and dynam-ically change their polarity into either n-type or p-type conduction modes, enabling also a multi-VT behavior. The polarity con-trol feature, opposite to conventional MOSFETs where the device nature is set to either n-type or p-type by the fabrication, implies that both conduction modes of a Reconfigurable Field Effect Transistor can be influenced by stress profiles of a given polarity. Our experiments showed that NBTI has a stronger effect on both conduction modes of such a transistor, independent of the VT mode in which the device is operated, as compared to PBTI. Moreover, n-type programmed devices showed a greater degradation of their threshold voltages. Finally, we observed that the high-VT mode is more prone to be subjected to sub-threshold slope degradation compared to the low-VT mode.