Relaxation and recombination processes in Ge/SiGe multiple quantum wells

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • E. Gatti - , University of Milan - Bicocca (Author)
  • A. Giorgioni - , University of Milan - Bicocca (Author)
  • E. Grilli - , University of Milan - Bicocca (Author)
  • M. Guzzi - , University of Milan - Bicocca (Author)
  • D. Chrastina - , Polytechnic University of Milan (Author)
  • G. Isella - , Polytechnic University of Milan (Author)
  • A. Chernikov - , University of Marburg (Author)
  • K. Kolata - , University of Marburg (Author)
  • V. Bornwasser - , University of Marburg (Author)
  • N. S. Köster - , University of Marburg (Author)
  • R. Woscholski - , University of Marburg (Author)
  • S. Chatterjee - , University of Marburg (Author)

Abstract

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at Γ is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

Details

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages470-471
Number of pages2
ISBN (print)9780735411944
Publication statusPublished - 2013
Peer-reviewedYes
Externally publishedYes

Publication series

SeriesAIP Conference Proceedings
Volume1566
ISSN0094-243X

Conference

Title31st International Conference on the Physics of Semiconductors, ICPS 2012
Duration29 July - 3 August 2012
CityZurich
CountrySwitzerland

Keywords

ASJC Scopus subject areas

Keywords

  • carrier dynamics, photoluminescence, quantum well, SiGe