The implementation of advanced electronic devices in the fourth industrial revolution era can be achieved with bottom-up grown silicon nanowire (Si-NW) based transistors. Here, we have fabricated reconfigurable Schottky-barrier (SB) thin-film transistors (TFTs) consisting of a parallel array of bottom-up grown single-crystalline Si-NWs and investigated in detail their device length dependent electrical performance and transport mechanism with current-voltage transport-map, key electrical parameters, and numerical simulation. In particular, the effective extension length (Lext_eff) limited significantly the overall conduction behavior of reconfigurable Si-NW SB-TFTs, such as ambipolarity, mobility, threshold voltage, and series resistance. This work provides important information for a better understanding of the physical operation of reconfigurable transistors with SB contacts and further optimization of their performance for implementing practical applications.