Quantification of thin film cristallographic orientation using X-ray diffraction with an area detector

Research output: Contribution to journalResearch articleContributedpeer-review


  • Jessy L. Baker - , University of California at Berkeley (Author)
  • Leslie H. Jimison - , Stanford University (Author)
  • Stefan Mannsfeld - , Stanford University, SLAC National Accelerator Laboratory (Author)
  • Steven Volkman - , University of California at Berkeley (Author)
  • Shong Yin - , University of California at Berkeley (Author)
  • Vivek Subramanian - , University of California at Berkeley (Author)
  • Alberto Salleo - , Stanford University (Author)
  • A. Paul Alivisatos - , University of California at Berkeley (Author)
  • Michael F. Toney - , Stanford University (Author)


As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological and crystallography information is needed to predict and optimize the film's electrical, optical, and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector in two sample geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.


Original languageEnglish
Pages (from-to)9146-9151
Number of pages6
Issue number11
Publication statusPublished - 1 Jun 2010
Externally publishedYes