Quantification of thin film cristallographic orientation using X-ray diffraction with an area detector

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Jessy L. Baker - , University of California at Berkeley (Autor:in)
  • Leslie H. Jimison - , Stanford University (Autor:in)
  • Stefan Mannsfeld - , Stanford University, SLAC National Accelerator Laboratory (Autor:in)
  • Steven Volkman - , University of California at Berkeley (Autor:in)
  • Shong Yin - , University of California at Berkeley (Autor:in)
  • Vivek Subramanian - , University of California at Berkeley (Autor:in)
  • Alberto Salleo - , Stanford University (Autor:in)
  • A. Paul Alivisatos - , University of California at Berkeley (Autor:in)
  • Michael F. Toney - , Stanford University (Autor:in)

Abstract

As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological and crystallography information is needed to predict and optimize the film's electrical, optical, and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector in two sample geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.

Details

OriginalspracheEnglisch
Seiten (von - bis)9146-9151
Seitenumfang6
FachzeitschriftLangmuir
Jahrgang26
Ausgabenummer11
PublikationsstatusVeröffentlicht - 1 Juni 2010
Peer-Review-StatusJa
Extern publiziertJa