Quantification of deep hole-trap filling by molecular p-doping: Dependence on the host material purity
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 2348-2352 |
| Number of pages | 5 |
| Journal | Organic electronics |
| Volume | 14 |
| Issue number | 9 |
| Publication status | Published - Sept 2013 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84885472548 |
|---|
Keywords
Keywords
- Molecular p-doping, Organic semiconductors, Fermi-level, Deep trap-states, Ultra-violet photoemission spectroscopy