Pulsed stress behavior of platinum thin films

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

  • Detlef Bonfert - , Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT) (Author)
  • Horst Gieser - , Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT) (Author)
  • Karlheinz Bock - , Chair of Electronic Packaging Technology, Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), Technical University of Munich (Author)
  • Paul Svasta - , Polytechnic University of Bucharest (Author)
  • Ciprian Ionescu - , Polytechnic University of Bucharest (Author)

Abstract

Platinum thin film layer's long-term stability, repeatability, fast response time, and wide temperature range make it a useful choice in many applications. As a result, platinum resistance temperature devices (RTD) are known as the most reliable standard available for temperature measurements. In this paper we focus on the pulsed stress behavior of the platinum thin film layer, used as a conductive layer for heating and temperature sensing and the stability of the resistive properties. During pulsing, in situ monitoring of temperature generation was possible.

Details

Original languageGerman
Title of host publication2010 IEEE 16th International Symposium for Design and Technology in Electronic Packaging (SIITME)
PublisherIEEE
Pages83-88
Number of pages6
ISBN (print)978-1-4244-8122-4
Publication statusPublished - 26 Sept 2010
Peer-reviewedYes

Conference

Title2010 IEEE 16th International Symposium for Design and Technology in Electronic Packaging (SIITME)
Duration23 - 26 September 2010
LocationPitesti, Romania

External IDs

Scopus 78751502866
ORCID /0000-0002-0757-3325/work/139064838

Keywords

Keywords

  • Resistance, Voltage measurement, Platinum, Electrical resistance measurement, Current measurement, Temperature measurement, Pulse measurements