Preparation of crystalline dielectric modification silane layer by spincoating and its improvements on organic transistor performance

Research output: Contribution to journal › Conference article › Contributed › peer-review

Contributors

  • Yutaka Ito - , Toppan Printing Co., Ltd. (Author)
  • Ajay Virkar - , Stanford University (Author)
  • Jason Locklin - , University of Georgia (Author)
  • Stefan Mannsfeld - , Stanford University, SLAC National Accelerator Laboratory (Author)
  • Micheal Toney - , Stanford University (Author)
  • Zhenan Bao - , Stanford University (Author)

Abstract

Self-assembled monolayers (SAMs) of alkyl silane compounds have been used for modifying gate dielectrics surface of organic field-effect transistors (OFETs) and they have frequently shown improvement of FET performances. In this paper we deposited alkyl silane SAMs by simple spin-coating technique onto Si/SiO2 substrates. Spin-cast octadecyltrimethoxysilane (OTMS) SAMs had ultra smooth crystalline surface and provided an excellent dielectric surface for OFETs. In fact on the OTMS SAM treated dielectric, pentacene OFETs showed hole mobilities over 2.0 cm2/Vs and electron mobilties over 1.0 and 5.0 cm2/Vs were demonstrated for 3,4:9,10-perylene diimide derivative and C60, respectively. Fabrication technique and characterizations of the OTMS SAMs is described.

Details

Original languageEnglish
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2009
Peer-reviewedYes
Externally publishedYes

Conference

TitleOrganic Field-Effect Transistors VIII
Duration3 - 5 August 2009
CitySan Diego, CA
CountryUnited States of America

Keywords

Research priority areas of TU Dresden

ASJC Scopus subject areas

Keywords

  • C60, Dielectric, Modification, Organic semiconductor, Pentacene, Self-assembled monolayer, Spin coat, Transistor