Preparation of crystalline dielectric modification silane layer by spincoating and its improvements on organic transistor performance
Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Beigetragen › Begutachtung
Beitragende
Abstract
Self-assembled monolayers (SAMs) of alkyl silane compounds have been used for modifying gate dielectrics surface of organic field-effect transistors (OFETs) and they have frequently shown improvement of FET performances. In this paper we deposited alkyl silane SAMs by simple spin-coating technique onto Si/SiO2 substrates. Spin-cast octadecyltrimethoxysilane (OTMS) SAMs had ultra smooth crystalline surface and provided an excellent dielectric surface for OFETs. In fact on the OTMS SAM treated dielectric, pentacene OFETs showed hole mobilities over 2.0 cm2/Vs and electron mobilties over 1.0 and 5.0 cm2/Vs were demonstrated for 3,4:9,10-perylene diimide derivative and C60, respectively. Fabrication technique and characterizations of the OTMS SAMs is described.
Details
Originalsprache | Englisch |
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Fachzeitschrift | Proceedings of SPIE - The International Society for Optical Engineering |
Publikationsstatus | Veröffentlicht - 2009 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Konferenz
Titel | Organic Field-Effect Transistors VIII |
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Dauer | 3 - 5 August 2009 |
Stadt | San Diego, CA |
Land | USA/Vereinigte Staaten |
Schlagworte
Forschungsprofillinien der TU Dresden
ASJC Scopus Sachgebiete
Schlagwörter
- C60, Dielectric, Modification, Organic semiconductor, Pentacene, Self-assembled monolayer, Spin coat, Transistor