Poly 3-methylthiophene based memristor device for neuromorphic computing

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

Von Neumann computing-based memory has reached its limit, it is incapable of performing two tasks simultaneously, i.e. data storage and computation. Artificial neuromorphic computing (ANC) inspired by biological neural network is the next generation memory technology, which is based on a memristor device. Study of memristor is a hot topic in electronic research as it exhibits multifunctionality. Electrochemically synthesized doped Poly 3-methylthiophene (P3MT) based single layer memristor device showcases neuromorphic computing applications when resistance is enhanced to insulating state, by the process of de-doping. Morphological/structural deformation created by the process of de-doping on the surface of active layer is responsible for multifunctionality such as controllable negative differential resistance (NDR), unipolar resistive-switching (RS), multi-level RS (analog memory) and bio-inspired artificial synapse in SS/P3MT/Ag device geometry.

Details

Original languageEnglish
Article number117360
Number of pages7
JournalSynthetic metals
Volume296
Publication statusPublished - Jul 2023
Peer-reviewedYes

External IDs

WOS 000990419400001

Keywords

Research priority areas of TU Dresden

Keywords

  • Current voltage, Electro polymerization, Negative differential resistance, ReRAM