Poly 3-methylthiophene based memristor device for neuromorphic computing

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Shobith M. Shanbogh - , REVA Group of Educational Institutions (Autor:in)
  • Ashish Varade - , Centre Manufacturing Technology Institute (CMTI) (Autor:in)
  • Anju Kumari - , Professur für Organische Bauelemente (cfaed) (Autor:in)
  • P. Anjaneyulu - , REVA Group of Educational Institutions (Autor:in)

Abstract

Von Neumann computing-based memory has reached its limit, it is incapable of performing two tasks simultaneously, i.e. data storage and computation. Artificial neuromorphic computing (ANC) inspired by biological neural network is the next generation memory technology, which is based on a memristor device. Study of memristor is a hot topic in electronic research as it exhibits multifunctionality. Electrochemically synthesized doped Poly 3-methylthiophene (P3MT) based single layer memristor device showcases neuromorphic computing applications when resistance is enhanced to insulating state, by the process of de-doping. Morphological/structural deformation created by the process of de-doping on the surface of active layer is responsible for multifunctionality such as controllable negative differential resistance (NDR), unipolar resistive-switching (RS), multi-level RS (analog memory) and bio-inspired artificial synapse in SS/P3MT/Ag device geometry.

Details

OriginalspracheEnglisch
Aufsatznummer117360
Seitenumfang7
FachzeitschriftSynthetic metals
Jahrgang296
PublikationsstatusVeröffentlicht - Juli 2023
Peer-Review-StatusJa

Externe IDs

WOS 000990419400001

Schlagworte

Forschungsprofillinien der TU Dresden

Schlagwörter

  • Current voltage, Electro polymerization, Negative differential resistance, ReRAM