Polarization conservation and dephasing in InAs quantum dot ensembles

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Contributors

  • Alexej Chernikov - , University of Marburg (Author)
  • Swantje Horst - , University of Marburg (Author)
  • Stephan W. Koch - , University of Marburg (Author)
  • Sangam Chatterjee - , University of Marburg (Author)
  • Wolfgang W. Rühle - , University of Marburg (Author)
  • Julian Sweet - , University of Arizona (Author)
  • Benjamin C. Richards - , University of Arizona (Author)
  • Joshua Hendrickson - , University of Arizona (Author)
  • Galina Khitrova - , University of Arizona (Author)
  • Hyatt M. Gibbs - , University of Arizona (Author)
  • Dimitri Litvinov - , Karlsruhe Institute of Technology (Author)
  • Dagmar Gerthsen - , Karlsruhe Institute of Technology (Author)
  • Martin Wegener - , Karlsruhe Institute of Technology (Author)

Abstract

We present time-resolved photoluminescence measurements performed on an ensemble of InAs quantum dots with density of 1011 dots/cm2 and ground state transition energies centered at 1.216 eV. The wavelength of the 100fs excitation pulse was tuned through the ground (excited) state transitions, resulting in resonant (optical phonon assisted) photoluminescence (PL). The PL was detected with its polarization both parallel with and perpendicular to the excitation polarization (along one of the crystal's cleave axes). The decay of the PL was time-resolved with a streak camera in the interval 1.5 - 3ns to avoid scattered laser light. A strong polarization dependence was observed. Considerable amount of the resonant fluorescence signal and even of the non-resonant PL signatures remained linearly polarized on a nanosecond time scale. A phenomenological rate equation analysis is made.

Details

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XVIII
Publication statusPublished - 2010
Peer-reviewedYes
Externally publishedYes

Publication series

SeriesProceedings of SPIE - The International Society for Optical Engineering
Volume7597
ISSN0277-786X

Conference

TitlePhysics and Simulation of Optoelectronic Devices XVIII
Duration25 - 28 January 2010
CitySan Francisco, CA
CountryUnited States of America

External IDs

ORCID /0000-0002-9213-2777/work/196666278