Polarization conservation and dephasing in InAs quantum dot ensembles

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

  • Alexej Chernikov - , Philipps-Universität Marburg (Autor:in)
  • Swantje Horst - , Philipps-Universität Marburg (Autor:in)
  • Stephan W. Koch - , Philipps-Universität Marburg (Autor:in)
  • Sangam Chatterjee - , Philipps-Universität Marburg (Autor:in)
  • Wolfgang W. Rühle - , Philipps-Universität Marburg (Autor:in)
  • Julian Sweet - , University of Arizona (Autor:in)
  • Benjamin C. Richards - , University of Arizona (Autor:in)
  • Joshua Hendrickson - , University of Arizona (Autor:in)
  • Galina Khitrova - , University of Arizona (Autor:in)
  • Hyatt M. Gibbs - , University of Arizona (Autor:in)
  • Dimitri Litvinov - , Karlsruher Institut für Technologie (Autor:in)
  • Dagmar Gerthsen - , Karlsruher Institut für Technologie (Autor:in)
  • Martin Wegener - , Karlsruher Institut für Technologie (Autor:in)

Abstract

We present time-resolved photoluminescence measurements performed on an ensemble of InAs quantum dots with density of 1011 dots/cm2 and ground state transition energies centered at 1.216 eV. The wavelength of the 100fs excitation pulse was tuned through the ground (excited) state transitions, resulting in resonant (optical phonon assisted) photoluminescence (PL). The PL was detected with its polarization both parallel with and perpendicular to the excitation polarization (along one of the crystal's cleave axes). The decay of the PL was time-resolved with a streak camera in the interval 1.5 - 3ns to avoid scattered laser light. A strong polarization dependence was observed. Considerable amount of the resonant fluorescence signal and even of the non-resonant PL signatures remained linearly polarized on a nanosecond time scale. A phenomenological rate equation analysis is made.

Details

OriginalspracheEnglisch
TitelPhysics and Simulation of Optoelectronic Devices XVIII
PublikationsstatusVeröffentlicht - 2010
Peer-Review-StatusJa
Extern publiziertJa

Publikationsreihe

ReiheProceedings of SPIE - The International Society for Optical Engineering
Band7597
ISSN0277-786X

Konferenz

TitelPhysics and Simulation of Optoelectronic Devices XVIII
Dauer25 - 28 Januar 2010
StadtSan Francisco, CA
LandUSA/Vereinigte Staaten

Externe IDs

ORCID /0000-0002-9213-2777/work/196666278