Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device.

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review



This paper proposes the derivation of a physics-based model of an analog memristive device realized as a bi-layer Al2O3/Nb2O5 stack. Memristive crossbar arrays implementing matrix-vector multiplications are a central building block of novel computing-in-memory architectures for artificial neural network and neuromorphic computing applications. The presented memristor shows analog, multi-level switching at high resistances without electroforming and is suitable for crossbar operations with low energy consumption. By including a graphical analysis method of the I-V curves obtained in a quasi-static approach, the dynamic behavior is analyzed with regard to ohmic and Poole-Frenkel behavior. Finally, a compact model, represented by an algebraic differential equation, is proposed and verified by fitting calculated solutions to experimental data.


Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems, ISCAS 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781665484855
Publication statusPublished - May 2022

Publication series

SeriesProceedings - IEEE International Symposium on Circuits and Systems


Title2022 IEEE International Symposium on Circuits and Systems, ISCAS 2022
Duration27 May - 1 June 2022
CountryUnited States

External IDs

ORCID /0000-0003-3259-4571/work/107904026
Scopus 85136109450
dblp conf/iscas/SchroedterMHASM22
unpaywall 10.1109/iscas48785.2022.9937966
Mendeley 3885887a-1096-3d22-b1b1-7761097f88c8


Sustainable Development Goals

ASJC Scopus subject areas


  • analog memristive device, bi-layer Al2O3/Nb2O5 stack, crossbar array for neuromorphic computing, Physics-based compact model, Poole-Frenkel emission