Oxidation behaviour of Ti-Al-C films composed mainly of a Ti2AlC phase

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Q. M. Wang - , Brandenburg University of Technology, Guangdong University of Technology, Pusan National University (Author)
  • W. Garkas - , Brandenburg University of Technology (Author)
  • A. Flores Renteria - , Brandenburg University of Technology (Author)
  • C. Leyens - , Institute of Materials Science, Chair of Materials Technology, Brandenburg University of Technology, TUD Dresden University of Technology (Author)
  • H. W. Lee - , Pusan National University (Author)
  • K. H. Kim - , Pusan National University (Author)

Abstract

This paper addresses the oxidation behaviour of Ti-Al-C films composed mainly of a Ti2AlC phase. The films exhibited rather low oxidation rates at 600 and 700°C, with an oxygen-rich zone or a thin oxide layer appearing on the film surfaces. Much faster oxidation rates were observed at 800 and 900°C. The Ti2AlC phase was quickly consumed by oxidation. From the film surface to the inner zone, TiO2-rich layer, Al2O3-rich layer, and TiO2+Al2O3 mixed layer was observed, respectively. The oxidation mechanism of the Ti-Al-C film is discussed based on the experimental results.

Details

Original languageEnglish
Pages (from-to)2948-2955
Number of pages8
JournalCorrosion Science
Volume53
Issue number9
Publication statusPublished - Sept 2011
Peer-reviewedYes

Keywords

ASJC Scopus subject areas

Keywords

  • A. Ceramic, A. Sputtered films, B. SEM, B. XRD, C. Oxidation