Organischer Feldeffekttransistor und Herstellungsverfahren

Research output: Intellectual PropertyPatent application/Patent

Contributors

Abstract

The present disclosure relates to an organic field effect transistor, comprising a first electrode (1) and a second electrode (2), the electrodes providing a source electrode and a drain electrode, a gate electrode (6), an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode (6), wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.

Translated title of the contribution
Organic field effect transistor and method for production

Details

The present disclosure relates to an organic field effect transistor, comprising a first electrode (1) and a second electrode (2), the electrodes providing a source electrode and a drain electrode, a gate electrode (6), an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode (6), wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.

Original languageGerman
IPC (International Patent Classification)H01L 51/ 05 A I
Patent numberEP2790238
Country/TerritoryGermany
Priority date10 Apr 2013
Priority numberEP20130163215
Publication statusPublished - 15 Oct 2014
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External IDs

ORCID /0000-0002-9773-6676/work/142659836