Organischer Feldeffekttransistor und Herstellungsverfahren
Publikation: Geistiges Eigentum › Patentanmeldung/Patent
Beitragende
- Technische Universität Dresden
- Novaled GmbH
Abstract
The present disclosure relates to an organic field effect transistor, comprising a first electrode (1) and a second electrode (2), the electrodes providing a source electrode and a drain electrode, a gate electrode (6), an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode (6), wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.
Details
The present disclosure relates to an organic field effect transistor, comprising a first electrode (1) and a second electrode (2), the electrodes providing a source electrode and a drain electrode, a gate electrode (6), an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode (6), wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.
Originalsprache | Deutsch |
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IPC (Internationale Patentklassifikation) | H01L 51/ 05 A I |
Veröffentlichungsnummer | EP2790238 |
Land/Gebiet | Deutschland |
Prioritätsdatum | 10 Apr. 2013 |
Prioritätsnummer | EP20130163215 |
Publikationsstatus | Veröffentlicht - 15 Okt. 2014 |
Externe IDs
ORCID | /0000-0002-9773-6676/work/142659836 |
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