Organic Field Effect Transistor and Method for Production
Research output: Intellectual Property › Patent application/Patent
Contributors
- Novaled GmbH
- TUD Dresden University of Technology
Abstract
The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.
Details
The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.
Original language | English |
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IPC (International Patent Classification) | H01L 51/ 00 A I |
Patent number | US2014306202 |
Country/Territory | Germany |
Priority date | 10 Apr 2013 |
Priority number | EP20130163215 |
Publication status | Published - 16 Oct 2014 |
External IDs
ORCID | /0000-0002-9773-6676/work/142659842 |
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