Organic Field Effect Transistor and Method for Production

Research output: Intellectual PropertyPatent application/Patent

Contributors

  • Novaled GmbH
  • TUD Dresden University of Technology

Abstract

The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.

Details

The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.

Original languageEnglish
IPC (International Patent Classification)H01L 51/ 00 A I
Patent numberUS2014306202
Country/TerritoryGermany
Priority date10 Apr 2013
Priority numberEP20130163215
Publication statusPublished - 16 Oct 2014
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External IDs

ORCID /0000-0002-9773-6676/work/142659842