Organic Field Effect Transistor and Method for Production
Publikation: Geistiges Eigentum › Patentanmeldung/Patent
Beitragende
- Novaled GmbH
- Technische Universität Dresden
Abstract
The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.
Details
The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.
Originalsprache | Englisch |
---|---|
IPC (Internationale Patentklassifikation) | H01L 51/ 00 A I |
Veröffentlichungsnummer | US2014306202 |
Land/Gebiet | Deutschland |
Prioritätsdatum | 10 Apr. 2013 |
Prioritätsnummer | EP20130163215 |
Publikationsstatus | Veröffentlicht - 16 Okt. 2014 |
Externe IDs
ORCID | /0000-0002-9773-6676/work/142659842 |
---|