Organic Field Effect Transistor and Method for Production

Publikation: Geistiges EigentumPatentanmeldung/Patent

Beitragende

  • Novaled GmbH
  • Technische Universität Dresden

Abstract

The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.

Details

The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided.

OriginalspracheEnglisch
IPC (Internationale Patentklassifikation)H01L 51/ 00 A I
VeröffentlichungsnummerUS2014306202
Land/GebietDeutschland
Prioritätsdatum10 Apr. 2013
PrioritätsnummerEP20130163215
PublikationsstatusVeröffentlicht - 16 Okt. 2014
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Externe IDs

ORCID /0000-0002-9773-6676/work/142659842