Organic Field Effect Transistor and Method for Producing the Same
Research output: Intellectual property › Patent application/Patent
Contributors
- Novaled GmbH
- TUD Dresden University of Technology
Abstract
The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.
Details
The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.
Original language | English |
---|---|
IPC (International Patent Classification) | H01L 51/ 10 A I |
Patent number | US2015270503 |
Country/Territory | Germany |
Priority date | 19 Jun 2012 |
Priority number | WO2012EP61700 |
Publication status | Published - 24 Sept 2015 |
External IDs
ORCID | /0000-0002-9773-6676/work/142659826 |
---|