Organic Field Effect Transistor and Method for Producing the Same

Research output: Intellectual PropertyPatent application/Patent

Contributors

  • Novaled GmbH
  • TUD Dresden University of Technology

Abstract

The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

Details

The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

Original languageEnglish
IPC (International Patent Classification)H01L 51/ 10 A I
Patent numberUS2015270503
Country/TerritoryGermany
Priority date19 Jun 2012
Priority numberWO2012EP61700
Publication statusPublished - 24 Sept 2015
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External IDs

ORCID /0000-0002-9773-6676/work/142659826