Organic Field Effect Transistor and Method for Producing the Same

Publikation: Geistiges EigentumPatentanmeldung/Patent

Beitragende

  • Novaled GmbH
  • Technische Universität Dresden

Abstract

The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

Details

The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

OriginalspracheEnglisch
IPC (Internationale Patentklassifikation)H01L 51/ 10 A I
VeröffentlichungsnummerUS2015270503
Land/GebietDeutschland
Prioritätsdatum19 Juni 2012
PrioritätsnummerWO2012EP61700
PublikationsstatusVeröffentlicht - 24 Sept. 2015
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Externe IDs

ORCID /0000-0002-9773-6676/work/142659826