Organic Field Effect Transistor and Method for Producing the Same
Publikation: Geistiges Eigentum › Patentanmeldung/Patent
Beitragende
- Novaled GmbH
- Technische Universität Dresden
Abstract
The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.
Details
The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.
Originalsprache | Englisch |
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IPC (Internationale Patentklassifikation) | H01L 51/ 10 A I |
Veröffentlichungsnummer | US2015270503 |
Land/Gebiet | Deutschland |
Prioritätsdatum | 19 Juni 2012 |
Prioritätsnummer | WO2012EP61700 |
Publikationsstatus | Veröffentlicht - 24 Sept. 2015 |
Externe IDs
ORCID | /0000-0002-9773-6676/work/142659826 |
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