Orbital textures and charge density waves in transition metal dichalcogenides

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • T. Ritschel - , Chair of Physics of Quantum Materials, Leibniz Institute for Solid State and Materials Research Dresden, TUD Dresden University of Technology (Author)
  • J. Trinckauf - , Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • K. Koepernik - , Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • B. Büchner - , Chair of Experimental Solid State Physics, Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • M. V. Zimmermann - , German Electron Synchrotron (DESY) (Author)
  • H. Berger - , Swiss Federal Institute of Technology Lausanne (EPFL) (Author)
  • Y. I. Joe - , University of Illinois at Urbana-Champaign (Author)
  • P. Abbamonte - , University of Illinois at Urbana-Champaign (Author)
  • J. Geck - , Leibniz Institute for Solid State and Materials Research Dresden (Author)

Abstract

Low-dimensional electron systems, as realized in layered materials, often tend to spontaneously break the symmetry of the underlying nuclear lattice by forming so-called density waves; a state of matter that at present attracts enormous attention. Here we reveal a remarkable and surprising feature of charge density waves, namely their intimate relation to orbital order. For the prototypical material 1T-TaS 2 we not only show that the charge density wave within the two-dimensional TaS 2 layers involves previously unidentified orbital textures of great complexity. We also demonstrate that two metastable stackings of the orbitally ordered layers allow manipulation of salient features of the electronic structure. Indeed, these orbital effects provide a route to switch 1T-TaS 2 nanostructures from metallic to semiconducting with technologically pertinent gaps of the order of 200 meV. This new type of orbitronics is especially relevant for the ongoing development of novel, miniaturized and ultrafast devices based on layered transition metal dichalcogenides.

Details

Original languageEnglish
Pages (from-to)328-331
Number of pages4
JournalNature physics
Volume11
Issue number4
Publication statusPublished - 8 Apr 2015
Peer-reviewedYes

External IDs

ORCID /0000-0002-2438-0672/work/158767773

Keywords

ASJC Scopus subject areas