Optimization of 4H-SiC photodiodes as selective UV sensors

Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review

Contributors

  • Christian D. Matthus - , Chair of Circuit Design and Network Theory, Friedrich-Alexander University Erlangen-Nürnberg (Author)
  • Alex Burenkov - , Fraunhofer Institute for Integrated Systems and Device Technology (Author)
  • Tobias Erlbacher - , Fraunhofer Institute for Integrated Systems and Device Technology (Author)

Abstract

The spectral responsivity of 4H-SiC photodiodes was studied and optimized in this paper with the aim to realize UV photo-sensors, selectively sensitive either to harder or to softer UV radiation. The spectral selectivity of the SiC-photodiodes was achieved by optimizing doping profiles in the active regions of the photodiodes and of the anti-reflective coating. A shallow doping profile of the p+-emitter allowed an enhancement of sensitivity for hard UV radiation. Deeper doping profiles were chosen for detection of softer UV radiation. The impact of the variations of the thickness of protective and anti-reflective layers was studied as well.

Details

Original languageGerman
Title of host publication2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
PublisherIEEE
Pages1-1
Number of pages1
ISBN (print)978-1-5090-2614-2
Publication statusPublished - 29 Sept 2016
Peer-reviewedYes

Conference

Title2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
Duration25 - 29 September 2016
LocationHalkidiki, Greece

External IDs

Scopus 85019986337

Keywords

Keywords

  • Photodiodes, Numerical models, Optimization, Numerical simulation, Doping profiles, Sensor systems