Online temperature estimation of a high-power 4.5 kV IGBT module based on the gate-emitter threshold voltage
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
An online temperature estimation method for IGBTs has been developed. It is based on the gate-emitter threshold voltage captured during the turn-on transient, which can be used as a temperature-sensitive electrical parameter. A dedicated measurement board directly connected to the power device was designed and tested in a high-power 4.5-kV IGBT module over its whole operation range.
Details
| Original language | German |
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| Title of host publication | 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 1-8 |
| Number of pages | 8 |
| ISBN (print) | 978-9-0758-1523-8 |
| Publication status | Published - 10 Sept 2015 |
| Peer-reviewed | Yes |
Conference
| Title | 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) |
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| Duration | 8 - 10 September 2015 |
| Location | Geneva, Switzerland |
External IDs
| Scopus | 84965042626 |
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Keywords
Keywords
- Temperature measurement, Voltage measurement, Insulated gate bipolar transistors, Current measurement, Semiconductor device measurement, Temperature sensors, Threshold voltage