Online temperature estimation of a high-power 4.5 kV IGBT module based on the gate-emitter threshold voltage
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
An online temperature estimation method for IGBTs has been developed. It is based on the gate-emitter threshold voltage captured during the turn-on transient, which can be used as a temperature-sensitive electrical parameter. A dedicated measurement board directly connected to the power device was designed and tested in a high-power 4.5-kV IGBT module over its whole operation range.
Details
| Originalsprache | Deutsch |
|---|---|
| Titel | 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers (IEEE) |
| Seiten | 1-8 |
| Seitenumfang | 8 |
| ISBN (Print) | 978-9-0758-1523-8 |
| Publikationsstatus | Veröffentlicht - 10 Sept. 2015 |
| Peer-Review-Status | Ja |
Konferenz
| Titel | 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) |
|---|---|
| Dauer | 8 - 10 September 2015 |
| Ort | Geneva, Switzerland |
Externe IDs
| Scopus | 84965042626 |
|---|
Schlagworte
Schlagwörter
- Temperature measurement, Voltage measurement, Insulated gate bipolar transistors, Current measurement, Semiconductor device measurement, Temperature sensors, Threshold voltage