Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories

Tarek Nadi Ismail Ali

Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories

Research output: Types of thesis › Doctoral thesis

Contributors

Tarek Nadi Ismail Ali - , Chair of Experimental Physics / Photophysics (Author)

Details

Original language	English
Qualification level	Dr. rer. nat.
Awarding Institution	Technische Universität Dresden
Supervisors/Advisors	Eng, Lukas, Reviewer Van-Houdt, Jan, Reviewer, External person Muller, Johannes, Reviewer, External person
Defense Date (Date of certificate)	1 Mar 2022
Publication status	Published - 26 Apr 2022

Keywords

Research priority areas of TU Dresden

Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

Ali, T., Kühnel, K., Olivo, R., Lehninger, D., Müller, F., Lederer, M. & Rudolph, M. & 13 others, Oehler, S., Mertens, K., Hoffmann, R., Zimmermann, K., Schramm, P., Metzger, J., Binder, R., Czernohorsky, M., Kämpfe, T., Seidel, K., Müller, J., Van Houdt, J. & Eng, L. M., Sept 2021, In: Electronic Materials. 2, 3, p. 344-369 26 p.

Research output: Contribution to journal › Research article › Contributed › peer-review

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Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories

Contributors

Details

Keywords

Research priority areas of TU Dresden

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Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage