Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Marco Massarotto - , University of Udine (Author)
  • Francesco Driussi - , University of Udine (Author)
  • Antonio Affanni - , University of Udine (Author)
  • Suzanne Lancaster - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • David Esseni - , University of Udine (Author)

Abstract

Ferroelectric Tunnel Junctions (FTJs) are promising electron devices which can be operated as memristors able to realize artificial synapses for neuromorphic computing. In this work, after a thorough validation of the in-house-developed experimental setup, novel methodologies are devised and employed to investigate the large- and small-signal responses of FTJs, whose discrepancies have proven difficult to interpret in previous literature. Our findings convey a significant insight into the contribution of the irreversible polarization switching to the bias-dependent differential capacitance of the ferroelectric–dielectric stack.

Details

Original languageEnglish
Article number108569
JournalSolid-state electronics
Volume200
Issue number200
Publication statusPublished - Feb 2023
Peer-reviewedYes

External IDs

Mendeley a627f2ae-3c13-3861-a052-5bc77b8c67f2

Keywords

Keywords

  • Experimental characterization, Ferroelectric, Ferroelectric Tunnel Junction (FTJ), Hafnium Zirconium Oxide (HZO), Polarization switching, Small signal capacitance