Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

Research output: Contribution to journalResearch articleContributedpeer-review


  • Marco Massarotto - , University of Udine (Author)
  • Francesco Driussi - , University of Udine (Author)
  • Antonio Affanni - , University of Udine (Author)
  • Suzanne Lancaster - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • David Esseni - , University of Udine (Author)


Ferroelectric Tunnel Junctions (FTJs) are promising electron devices which can be operated as memristors able to realize artificial synapses for neuromorphic computing. In this work, after a thorough validation of the in-house-developed experimental setup, novel methodologies are devised and employed to investigate the large- and small-signal responses of FTJs, whose discrepancies have proven difficult to interpret in previous literature. Our findings convey a significant insight into the contribution of the irreversible polarization switching to the bias-dependent differential capacitance of the ferroelectric–dielectric stack.


Original languageEnglish
Article number108569
JournalSolid-state electronics
Issue number200
Publication statusPublished - Feb 2023

External IDs

Mendeley a627f2ae-3c13-3861-a052-5bc77b8c67f2
ORCID /0000-0003-3814-0378/work/142256249



  • Experimental characterization, Ferroelectric, Ferroelectric Tunnel Junction (FTJ), Hafnium Zirconium Oxide (HZO), Polarization switching, Small signal capacitance