Ferroelectric Tunnel Junctions (FTJs) are promising electron devices which can be operated as memristors able to realize artificial synapses for neuromorphic computing. In this work, after a thorough validation of the in-house-developed experimental setup, novel methodologies are devised and employed to investigate the large- and small-signal responses of FTJs, whose discrepancies have proven difficult to interpret in previous literature. Our findings convey a significant insight into the contribution of the irreversible polarization switching to the bias-dependent differential capacitance of the ferroelectric–dielectric stack.
|Publication status||Published - Feb 2023|
ASJC Scopus subject areas
- Experimental characterization, Ferroelectric, Ferroelectric Tunnel Junction (FTJ), Hafnium Zirconium Oxide (HZO), Polarization switching, Small signal capacitance