Nonvolatile multilevel resistive switching in Ar+ Irradiated BiFeO3 thin films

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Y. Shuai - , University of Electronic Science and Technology of China (Author)
  • X. Ou - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • W. Luo - , University of Electronic Science and Technology of China (Author)
  • N. Du - , Chemnitz University of Technology (Author)
  • C. Wu - , University of Electronic Science and Technology of China (Author)
  • W. Zhang - , University of Electronic Science and Technology of China (Author)
  • D. Burger - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • C. Mayr - , Chair of Highly-Parallel VLSI Systems and Neuro-Microelectronics (Author)
  • R. Schuffny - , Chair of Highly-Parallel VLSI Systems and Neuro-Microelectronics (Author)
  • S. Zhou - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • M. Helm - , Chair of Semiconductor Spectroscopy, Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • H. Schmidt - , Chemnitz University of Technology (Author)

Abstract

Low-energy Ar+ ion irradiation has been applied to an Au/BiFeO3/Pt capacitor structure before deposition of the Au top electrode. The irradiated thin film exhibits multilevel resistive switching (RS) without detrimental resistance degradation, which makes the intermediate resistance states more distinguishable, as compared with the nonirradiated thin film. The stabilization of resistance states after irradiation is discussed based on the analysis of the conduction mechanism during the RS, which was investigated by means of temperature-dependent current-voltage measurement from room temperature to 423 K.

Details

Original languageEnglish
Article number6381441
Pages (from-to)54-56
Number of pages3
Journal IEEE electron device letters : a publication of the IEEE Electron Devices Society
Volume34
Issue number1
Publication statusPublished - 1 Jan 2013
Peer-reviewedYes

External IDs

Scopus 84871756286
Ieee 10.1109/LED.2012.2227666

Keywords

ASJC Scopus subject areas

Keywords

  • Irradiation, rectifying, resistive switching (RS)