Morphology controlled growth of arrays of GaN nanopillars and randomly distributed GaN nanowires on sapphire using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Controlled growth of oriented GaN nanopillars and randomly distributed nanowires is accomplished by MOCVD using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor.
Details
Original language | English |
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Pages (from-to) | 998-999 |
Number of pages | 2 |
Journal | Chemical communications |
Volume | 2 |
Issue number | 9 |
Publication status | Published - 2002 |
Peer-reviewed | Yes |
Externally published | Yes |
External IDs
PubMed | 12123087 |
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