Monte Carlo simulation of charge carrier injection in twin flash™ memory devices during program and erase
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
An iterative and time-dependent simulation method based on a full band Monte Carlo algorithm is presented to describe the injection behavior of hot electrons and holes during program and erase of Twin Flash™ memory cells. Secondaries during programming and the feedback of already injected and trapped charge carriers in the ONO nitride on subsequent injection processes are taken into account. By this method it is possible to obtain valuable information on the time-dependent evolution and the local distribution of injection currents and trapped charges in the ONO nitride of the Twin Flash™ cell.
Details
Original language | English |
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Title of host publication | 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 322-325 |
Number of pages | 4 |
ISBN (print) | 1424404045, 9781424404049 |
Publication status | Published - 2006 |
Peer-reviewed | Yes |
Externally published | Yes |
Publication series
Series | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD |
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Conference
Title | 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 |
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Duration | 6 - 8 September 2006 |
City | Monterey, CA |
Country | United States of America |
External IDs
ORCID | /0000-0003-3814-0378/work/155840914 |
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Keywords
ASJC Scopus subject areas
Keywords
- Erase, Hot carrier injection, Monte Carlo simulation, NROM, Program, Secondaries, Twin Flash memories