Modeling of SiGe power HBT intermodulation distortion using HICUM

P. Sakalas; M. Schroter; L. Kornau; W. Kraus; J. Herricht

doi:10.1109/ESSDERC.2003.1256876

Modeling of SiGe power HBT intermodulation distortion using HICUM

Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review

Contributors

P. Sakalas - , Chair of Electron Devices and Integrated Circuits, Semiconductor Physics Institute Vilnus (Author)
M. Schroter - , Chair of Electron Devices and Integrated Circuits (Author)
L. Kornau - , TUD Dresden University of Technology (Author)
W. Kraus - , Atmel Germany GmbH (Author)
J. Herricht - , Chair of Electron Devices and Integrated Circuits (Author)

Abstract

Single- and two-tone power characteristics of "true" Si/SiGe HBTs were measured with fundamental frequencies up to 5 GHz. For obtaining accurate information on harmonic and, in particular, intermodulation distortion, careful de-embedding of parasitics was performed using a three-step method. HICUM simulations show good agreement with measured data.

Details

Original language	English
Title of host publication	ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.
Publisher	IEEE
Pages	311-314
Number of pages	4
ISBN (print)	0-7803-7999-3
Publication status	Published - 18 Sept 2003
Peer-reviewed	Yes

Conference

Title	ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.
Duration	16 - 18 September 2003
Location	Estoril, Portugal

External IDs

Scopus	20344401929

Keywords

Silicon germanium, Germanium silicon alloys, Heterojunction bipolar transistors, Intermodulation distortion, Distortion measurement, Frequency measurement, Signal processing, Power transistors, Power measurement, Parameter extraction

Research Portal of the TU Dresden

Contributors

Abstract

Details

Conference

External IDs

Keywords

Keywords