Modeling of SiGe power HBT intermodulation distortion using HICUM

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Beitragende

Abstract

Single- and two-tone power characteristics of "true" Si/SiGe HBTs were measured with fundamental frequencies up to 5 GHz. For obtaining accurate information on harmonic and, in particular, intermodulation distortion, careful de-embedding of parasitics was performed using a three-step method. HICUM simulations show good agreement with measured data.

Details

OriginalspracheEnglisch
TitelESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers (IEEE)
Seiten311-314
Seitenumfang4
ISBN (Print)0-7803-7999-3
PublikationsstatusVeröffentlicht - 18 Sept. 2003
Peer-Review-StatusJa

Konferenz

TitelESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.
Dauer16 - 18 September 2003
OrtEstoril, Portugal

Externe IDs

Scopus 20344401929

Schlagworte

Schlagwörter

  • Silicon germanium, Germanium silicon alloys, Heterojunction bipolar transistors, Intermodulation distortion, Distortion measurement, Frequency measurement, Signal processing, Power transistors, Power measurement, Parameter extraction