Modeling of High Frequency Noise in SiGe HBTs
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
A compact model solution, consistent with the system theory for correlated base and collector shot noise sources, was derived and implemented in the bipolar transistor compact model HICUM using Verilog-AMS. Simulations were performed using ADS 2005A. Results were tested against measured noise parameters for high-speed conventional and LEC doped SiGe HBTs. Perfect agreement between simulated and measured data confirmed model validity
Details
Original language | English |
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Title of host publication | 2006 International Conference on Simulation of Semiconductor Processes and Devices |
Publisher | IEEE |
Pages | 271-274 |
Number of pages | 4 |
ISBN (print) | 1-4244-0404-5 |
Publication status | Published - 8 Sept 2006 |
Peer-reviewed | Yes |
Conference
Title | 2006 International Conference on Simulation of Semiconductor Processes and Devices |
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Duration | 6 - 8 September 2006 |
Location | Monterey, CA, USA |
External IDs
Ieee | 10.1109/SISPAD.2006.282888 |
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Scopus | 42549100901 |
Keywords
Keywords
- Frequency, Silicon germanium, Germanium silicon alloys, Circuit noise, Bipolar transistors, Low-frequency noise, Computational modeling, Hardware design languages, Circuit simulation, Transfer functions