Modeling of High Frequency Noise in SiGe HBTs

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

Abstract

A compact model solution, consistent with the system theory for correlated base and collector shot noise sources, was derived and implemented in the bipolar transistor compact model HICUM using Verilog-AMS. Simulations were performed using ADS 2005A. Results were tested against measured noise parameters for high-speed conventional and LEC doped SiGe HBTs. Perfect agreement between simulated and measured data confirmed model validity

Details

Original languageEnglish
Title of host publication2006 International Conference on Simulation of Semiconductor Processes and Devices
PublisherIEEE
Pages271-274
Number of pages4
ISBN (print)1-4244-0404-5
Publication statusPublished - 8 Sept 2006
Peer-reviewedYes

Conference

Title2006 International Conference on Simulation of Semiconductor Processes and Devices
Duration6 - 8 September 2006
LocationMonterey, CA, USA

External IDs

Ieee 10.1109/SISPAD.2006.282888
Scopus 42549100901

Keywords

Keywords

  • Frequency, Silicon germanium, Germanium silicon alloys, Circuit noise, Bipolar transistors, Low-frequency noise, Computational modeling, Hardware design languages, Circuit simulation, Transfer functions