Modeling of High Frequency Noise in SiGe HBTs
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
A compact model solution, consistent with the system theory for correlated base and collector shot noise sources, was derived and implemented in the bipolar transistor compact model HICUM using Verilog-AMS. Simulations were performed using ADS 2005A. Results were tested against measured noise parameters for high-speed conventional and LEC doped SiGe HBTs. Perfect agreement between simulated and measured data confirmed model validity
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 2006 International Conference on Simulation of Semiconductor Processes and Devices |
| Herausgeber (Verlag) | IEEE |
| Seiten | 271-274 |
| Seitenumfang | 4 |
| ISBN (Print) | 1-4244-0404-5 |
| Publikationsstatus | Veröffentlicht - 8 Sept. 2006 |
| Peer-Review-Status | Ja |
Konferenz
| Titel | 2006 International Conference on Simulation of Semiconductor Processes and Devices |
|---|---|
| Dauer | 6 - 8 September 2006 |
| Ort | Monterey, CA, USA |
Externe IDs
| Ieee | 10.1109/SISPAD.2006.282888 |
|---|---|
| Scopus | 42549100901 |
Schlagworte
Schlagwörter
- Frequency, Silicon germanium, Germanium silicon alloys, Circuit noise, Bipolar transistors, Low-frequency noise, Computational modeling, Hardware design languages, Circuit simulation, Transfer functions